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Low VCE(sat) IGBT with Diode High speed IGBT with Diode Combi Packs
VCES IXGH10N60U1 600 V IXGH10N60AU1 600 V
IC25 20 A 20 A
VCE(sat) 2.5 V 3.0 V
TO-247 AD Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque (M3) Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 150 Clamped inductive load, L = 300 H TC = 25C Maximum Ratings 600 600 20 30 20 10 40 ICM = 20 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C Features
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G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
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1.13/10 Nm/lb.in. 6 300 g C
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International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode FRED) - soft recovery with low IRM
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 260 2.5 100 10N60U1 10N60AU1 2.5 3.0 V V A mA nA V V
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BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 750 A, VGE = 0 V = 500 A, VCE = VGE
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages
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Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost
(c) 1996 IXYS All rights reserved
91751G(3/96)
IXGH10N60U1 IXGH10N60AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 8 750 125 30 50 15 25 100 200 0.4 600 300 0.6 100 200 1 900 570 360 2.0 1.2 0.25 70 25 45 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ 1500 ns 2000 ns 600 ns mJ mJ 1.25 K/W K/W TO-247 AD Outline
gfs Cies Coes Cres Qg Q ge Q gc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES , RG = Roff = 150 Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 V CES, RG = Roff = 150 Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 10N60AU1 10N60AU1
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
10N60U1 10N60AU1 10N60U1 10N60AU1
Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.75 2.5 165 35 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 64 A/s VR = 360 V TJ = 100C IF = 1 A; -di/dt = 50 A/s; VR = 30 V TJ = 25C
50
2.5 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH10N60U1 IXGH10N60AU1
Fig. 1 Saturation Characteristics
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5
7V TJ = 25C VGE=15V 13V 11V 9V
Fig. 2
100 90 80 70 60 50 40 30 20 10 0
T J = 25C
Output Characterstics
V GE = 15V 13V
IC - Amperes
IC - Amperes
11V 9V 7V
0
2
4
6
8
10 12 14 16
18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
T J = 25C
Fig. 4
1.5 1.4
VGE = 15V
Temperature Dependence of Output Saturation Voltage
IC = 20A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
IC = 5A IC = 10A
VCE - Volts
6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15
IC = 20A IC = 10A IC = 5A
-50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10
T J = 25C T J = 125C TJ = - 40C
Fig. 6
1.2
Temperature Dependence of Breakdown and Threshold Voltage
VGE(th) IC = 250A
BV / VGE(th) - Normalized
VCE = 10 V
1.1 1.0 0.9 0.8 0.7 0.6 -50
IC - Amperes
BV CES IC = 250A
-25
0
25
50
75
100 125 150
VGE - Volts
G N JNB
TJ - Degrees C
(c) 1996 IXYS All rights reserved
IXGH10N60U1 IXGH10N60AU1
Fig.7 Gate Charge
15 13 11
V CE = 480V IG = 10mA
Fig.8 Turn-Off Safe Operating Area
100
10
T J = 125C
9 7 5 3 1
IC - Amperes
VGE - Volts
IC = 10A
dV/dt < 3V/ns
1
0.1
0.01 0 10 20 30 40 50 0 100 200 300 400 500 600
Total Gate Charge - (nC)
VCE - Volts
Fig.9 Capacitance Curves
800 700
f = 1MHz Cies
Capacitance - pF
600 500 400 300 200 100 0 0 5 10 15 20 25
Coes Cres
VCE - Volts
Fig.10 Transient Thermal Impedance
Thermal Response - K/W
1.00
D=0.5 D=0.2 D=0.1
0.10 D=0.05
D=0.02 D=0.01 Single Pulse
0.01 10 -5
10 -4
10-3
10-2
10-1
10 0
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH10N60U1 IXGH10N60AU1
Fig.11 Maximum Forward Voltage Drop
40 35 25
Fig.12
Peak Forward Voltage VFR and Forward Recovery Time tFR
1000
TJ = 125C
Current - Amperes
25 20 15 10 5 0 0.0 0.5 1.0 1.5 TJ = 150C TJ = 25C TJ = 100C
15 10 5 0
tfr
600 400 200 0 300
2.0
2.5
0
50
100
150
200
250
Voltage Drop - Volts
diF/dt - A/s
Fig.13 Junction Temperature Dependence off IRM and Qr
1.4 1.2 1.0
Fig.14
T J = 100C
Reverse Recovery Charge
Normalized IRM / Qr
1.0 0.8
IRM
Qr - nanocoulombs
0.8 0.6 0.4 0.2
V R = 350V IF = 8A max
0.6 0.4 0.2 0.0 0
Qr
0.0 40 80 120 160 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.15 Peak Reverse Recovery Current
25
TJ = 100C
Fig.16
400
Reverse Recovery Time
20
VR = 350V
T J = 100C
trr - nanoseconds
IF = 8A
300
VR = 350V IF = 8A
IRM - Amperes
15 10 5 0 0 100
max
200
100
0 200 300 400 0 100 200 300 400
diF /dt - A/s
diF /dt - A/s
(c) 1996 IXYS All rights reserved
tfr - nanoseconds
30
20
IF = 8A V FR
800
VFR - Volts
IXGH10N60U1 IXGH10N60AU1
Fig.17 Diode Transient Thermal resistance junction to case
3.0 2.0 RthJC - K/W
1.0
0.1 0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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